| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1794783 | Journal of Crystal Growth | 2008 | 8 Pages |
Abstract
Optical reflectance (R) and high-resolution X-ray diffraction (HR XRD) have been used for characterization and verification of the distributed Bragg reflectors (DBR) grown by two competing and complementary techniques: molecular beam epitaxy (MBE) and low-pressure metalorganic vapor phase epitaxy (LP MOVPE). The DBRs under study consisted of the stack of (Al)GaAs and AlAs quarter wavelength layers deposited on (1 0 0) oriented GaAs substrates. We demonstrate experimentally that employment of the above-mentioned methods allows for comprehensive characterization of the Bragg mirror properties and optimization of their fabrication procedure for application in highly demanding optical devices.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
A. Jasik, J. Gaca, M. Wójcik, J. Muszalski, K. Pierściński, K. Mazur, M. Kosmala, M. Bugajski,