InN excitonic deformation potentials determined experimentally

We report the experimental determination of the interband deformation potentials of indium nitride by combining both optical spectroscopy investigations and high-resolution X-ray measurements performed on a series of InN films grown by metal organic vapour-phase epitaxy. Our approach, which follows the one used for GaN by Shan et al. [Phys. Rev. B. 54 (1996) 13460], gives here for InN a1=−7.66 eV, a2=−2.59 eV, b1=5.06 eV, and b2=−2.53 eV.