| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1794866 | Journal of Crystal Growth | 2009 | 4 Pages |
Abstract
A grooved Al0.25Ga0.75N underlying layer on an AlN-coated sapphire substrate was used to grow crack free and low dislocation density Al0.25Ga0.75N to successfully realize high-performance UV A light emitters. A light-emitting diode grown on a grooved AlGaN underlying layer exhibited an output power of 12 mW at a DC current of 50 mA for a peak emission wavelength of 345 nm with an external quantum efficiency of 6.7%, which is the highest to date in this wavelength region. We also fabricated UV A laser diodes with an emission wavelength of 356 nm at a pulsed injection current of 414 mA.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Hirotoshi Tsuzuki, Fumiaki Mori, Kenichiro Takeda, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, Hirofumi Kan,