Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1794873 | Journal of Crystal Growth | 2009 | 4 Pages |
Abstract
Using an AlInN intermediate layer, GaN was grown on (1 1 1)Si substrate by selective metalorganic vapor phase epitaxy. The variation of the surface morphology was investigated as a function of the In composition and thickness of the AlInN layer. It was found that the In composition in the AlInN layer was a function of the growth temperature and thickness. Because of the small band offset at the AlInN/Si hetero-interface, we have achieved a low series resistance of the order of 9 Ω (0.0036 Ω cm2) across the GaN/AlInN/AlN/Si layer structure.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
M. Irie, N. Koide, Y. Honda, M. Yamaguchi, N. Sawaki,