| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1794877 | Journal of Crystal Growth | 2009 | 4 Pages |
Abstract
Si-doped a-plane GaN films with different doping concentrations were grown by metal-organic vapor phase epitaxy. A mirrorlike surface without pits or anisotropic stripes was observed by optical microscopy. Detailed optical properties of the samples were characterized by temperature- and excitation-intensity-dependent PL measurements. A series of emission peaks at 3.487, 3.440, 3.375–3.350, 3.290 and 3.197 eV were observed in the low-temperature PL spectra of all samples. The origin of these emissions is discussed in detail.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Dabing Li, Bei Ma, Reina Miyagawa, Weiguo Hu, Mitsuhisa Narukawa, Hideto Miyake, Kazumasa Hiramatsu,