| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1794883 | Journal of Crystal Growth | 2009 | 4 Pages |
Abstract
We have demonstrated InxGa1âxN epitaxial growth with InN mole fractions of x=0.07 to 0.17 on an m-plane ZnO substrate by metalorganic vapor phase epitaxy for the first time. The crystalline quality of the epilayers was found to be much higher than that of epilayers grown on a GaN template on an m-plane SiC substrate.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Yohjiro Kawai, Shinya Ohsuka, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki,