Effects of morphologies on the field emission characteristics of GaN nanorods grown on Si (0 0 1) by MBE

GaN nanorods were grown on Si (0 0 1) substrates with a native oxide layer by molecular beam epitaxy. The changes in the morphologies and their effects on the field emission characteristics of GaN nanorods were investigated by varying growth conditions, namely, growth time of low-temperature GaN buffer layer, growth time of GaN nanorods, Ga flux during growth of GaN nanorods, and growth temperature of GaN nanorods. GaN nanorods with a low aspect ratio measured by diode configuration showed better field emission characteristics than those with a high aspect ratio, which may be due to the effects of screening and the surface depletion layer. In addition, the distance between the GaN nanorods and the anode played an important role in the field emission characteristics such as turn-on field, field enhancement factor, and field distribution on the emitter surface.