Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1794944 | Journal of Crystal Growth | 2007 | 5 Pages |
Abstract
The effects of hydrogen doping on the optical and electrical properties of zinc oxide (ZnO) films were investigated. We prepared about 50-nm thick ZnO films on a sapphire substrate by using a pulsed laser deposition method and used a pulse-modulated inductively coupled plasma technique (PM-ICP) to intentionally insert hydrogen into the films. An increase in the electron concentration by hydrogen doping indicated that hydrogen is actually a cause of shallow donors. Moreover, the excitation intensity threshold for optically pumped stimulated emissions was significantly reduced after hydrogen doping.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Naoki Ohashi, Yu-Guang Wang, Takamasa Ishigaki, Yoshiki Wada, Hiroyuki Taguchi, Isao Sakaguchi, Takeshi Ohgaki, Yutaka Adachi, Hajime Haneda,