Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1794989 | Journal of Crystal Growth | 2008 | 5 Pages |
Abstract
The effect of annealing a 75nm-thick layer of indium gallium arsenide nitride (InGaAsN) in 1.0×10−6 Torr of nitrogen trifluoride (NF3) has been studied by photoluminescence spectrometry, X-ray diffraction, X-ray photoelectron spectroscopy, and hydrogen adsorption infrared spectroscopy. A red shift of 25 nm in the peak was observed following heating in NF3 at 530 °C. The compressive strain of the InGaAsN was reduced under annealing in NF3 ambient, while it increased under annealing in AsH3 ambient. It is concluded that N atoms diffuse into the alloy during the NF3 exposure at 530 °C and increase the nitrogen concentration from about 1.2–1.7%.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
R.L. Woo, G. Malouf, S.F. Cheng, R.N. Woo, M. Goorsky, R.F. Hicks,