Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1795037 | Journal of Crystal Growth | 2009 | 5 Pages |
Abstract
X-ray diffraction patterns, scanning electron microscopy images, and transmission electron microscopy (TEM) images showed that one-dimensional GaN nanorods grown on Si (1 1 1) substarates by using hydride vapor phase epitaxy had crystalline wurzite structures and were preferentially oriented along the [0 0 0 1] direction. The high-resolution TEM (HRTEM) images showed that the side facet planes of the tip region for the GaN nanorods consisted of {1¯ 1 0 0}, {1¯ 1 0 2}, and {1¯ 1 0 3} planes. The structural properties of the GaN nanorods were significantly affected by the gas-mixing and the substrate temperatures in the final growth zone.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
K.H. Lee, J.Y. Lee, Y.H. Kwon, S.Y. Ryu, T.W. Kang, C.H. Yoo, D.U. Lee, T.W. Kim,