III-Nitride crystal growth from nitride-salt solution

Single crystals of hexagonal boron nitride were grown by the nitride-salt solution temperature-gradient growth technique. Seeded growth was performed at 0.2 MPa nitrogen pressure between 760 and 900 °C. Growth of BN crystals was confirmed by Raman spectroscopy and transmission electron diffraction to be graphite-type boron nitride. The growth mechanism is under investigation, however, the crystals embedded in the solvent matrix were found to be separated from the seed by a boundary layer which seems to be a result of a solvent–seed interaction. This growth technique can be applied to AlN and to GaN with the application of pressure.