| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1795093 | Journal of Crystal Growth | 2007 | 7 Pages |
Abstract
The growth of GaN needles by high-pressure solution method is described in detail and compared to well-known platelets’ crystallization. The habit, morphology and crystal quality of the needles are examined. The growth mechanism and main factors determining the crystal habit in high-pressure solution method are discussed. The needles’ preparation to be the seeds for HVPE growth is presented.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
M. Boćkowski, I. Grzegory, G. Kamler, B. Łucznik, S. Krukowski, M. Wróblewski, P. Kwiatkowski, K. Jasik, S. Porowski,