Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1795103 | Journal of Crystal Growth | 2008 | 4 Pages |
Abstract
Bulk GaN crystals have been realized by the basic ammonothermal method. Three-dimensional polyhedron-shaped crystals in size of approximately 5 mm and their sliced wafers demonstrated the feasibility of the basic ammonothermal method to produce GaN wafers. Clear crystallographic facets of N face and m planes were observed although Ga face was decorated with angled facets of {1 0 1¯ 1} planes. The growth rate and growth nature showed distinct anisotropy. The transmission electron microscopy revealed high quality of microstructure, whereas selective etching and X-ray diffraction revealed multiple grains, which were presumably caused by insufficient structural quality of seed crystals.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Tadao Hashimoto, Feng Wu, James S. Speck, Shuji Nakamura,