| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1795139 | Journal of Crystal Growth | 2007 | 4 Pages |
Abstract
Large areas of electrically active regions of in-homogeneities have been revealed by the electroless photo-etching (PEC) method in GaN layers grown by the hydride vapor phase epitaxy (HVPE) technique.Variations in the local etch rate have been correlated with the variations in the free-carrier concentrations as determined by micro-Raman spectroscopy. The etch rate decreased linearly with the log of the carrier concentration. The latter could change by more than two orders of magnitude on the same sample.
Related Topics
Physical Sciences and Engineering
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Condensed Matter Physics
Authors
R. Lewandowska, J.L. Weyher, J.J. Kelly, L. Konczewicz, B. Lucznik,