Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1795198 | Journal of Crystal Growth | 2008 | 5 Pages |
Abstract
We synthesized ZnO films via oxidative annealing of ZnSe/GaAs heterostructures and investigated their structural and optical properties. Films were polycrystalline, c-axis oriented and exhibited superior optical properties. In addition, we detected nanometer-size As clusters into the ZnO film and a GaxOy layer at the ZnO/GaAs interface. Formation of an interfacial layer can prevent use of this technique for p-type doping and complicates identification of the origin of p-type response in the annealed ZnO/GaAs heterostructures.
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Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
O. Maksimov, B.Z. Liu,