Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1795262 | Journal of Crystal Growth | 2008 | 4 Pages |
Abstract
Ce substituted Bi1âxCexFeO3 (BCFO) films with x=0-0.15 were deposited on indium tin oxide (ITO)/glass substrates by sol-gel process annealed at 500 °C. Rhombohedral phase was confirmed by XRD study and no impure phases were observed till x=0.15. Substantially enhanced ferroelectricity was observed at room temperature due to the substitution of Ce. In the films with x=0.05 and 0.10, the double remnant polarization are 75.5 and 57.7 μC/cm2 at an applied field 860 kV/cm. Moreover, the breakdown field was enhanced in the films with Ce substitution.
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Authors
Hongri Liu, Bowu Yan, Xiuzhang Wang,