Article ID Journal Published Year Pages File Type
1795275 Journal of Crystal Growth 2007 6 Pages PDF
Abstract
Surface structures of GaAs(0 0 1) under molecular beam epitaxy conditions are described on the basis of in situ X-ray diffraction measurements. Exploiting the high-intensity, high angular resolution and element sensitivity of synchrotron X-rays, we revealed the details of the most frequently used surfaces including several phases of (2×4) and c(4×4).
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Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
Preview
Quantitative structure determination of GaAs(0 0 1) under typical MBE conditions using synchrotron X-ray diffraction
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