Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1795288 | Journal of Crystal Growth | 2007 | 4 Pages |
Abstract
In this work we show how in situ measurements of wafer curvature helps for monitoring the strain relaxation in group-III-nitride layers grown by molecular beam eptixay on silicon. In particular, we show the efficiency of GaN/AlN interlayers for growing high quality AlGaN/GaN heterostructures with residual stress that largely compensates the one appearing upon cooling down to room temperature.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Y. Cordier, N. Baron, F. Semond, J. Massies, M. Binetti, B. Henninger, M. Besendahl, T. Zettler,