MBE growth of TlInGaAs/TlInP/InP SCH LD structures and their laser operation with low-temperature variation of lasing wavelength

TlInGaAs/TlInP/InP separate confinement heterostructures (SCHs) were grown by gas-source molecular-beam epitaxy and metal stripe laser diodes (LDs) were fabricated. Temperature variation of electroluminescence (EL) peak wavelength was as small as 0.01 nm/K. Pulsed laser operation was achieved at 77-302 K. Threshold current density for the TlInGaAs/TlInP/InP SCH LD (0.6 kA/cm2 at 77 K) was smaller than that for the TlInGaAs/InP double heterostructure LD (0.8 kA/cm2 at 77 K). This is due to the increased refractive index of TlInP and the improved optical confinement. Temperature variation of main peak wavelength in the lasing spectra was as small as 0.06 nm/K. This is smaller than that of InGaAsP/InP DFB LDs.