Article ID Journal Published Year Pages File Type
1795344 Journal of Crystal Growth 2007 4 Pages PDF
Abstract

Growth procedure and excellent properties of very thin 240 nm thick, 95% relaxed, high Ge content Si0.3Ge0.7 buffer grown on SOI(0 0 1) substrate are demonstrated. All epilayers of the newly developed Si0.3Ge0.7/SOI(0 0 1) variable-temperature virtual substrate were grown in a single process by solid-source molecular beam epitaxy. Surface analysis of grown samples revealed smooth, cross-hatch free surface with low root mean square surface roughness of 0.9 nm and low threading dislocations density of 5×104 cm−2.

Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
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