Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1795347 | Journal of Crystal Growth | 2007 | 5 Pages |
Abstract
In this paper, we investigated the heteroepitaxial germanium (Ge) growth on a nano-patterned Si substrate using a diblock copolymer self-patterning process, which provides approximate 10-nm-diameter holes and 20 nm distances in lateral scale. A 300-nm-thick pure Ge film was grown by solid source molecular beam epitaxy (MBE) and the epitaxial film was characterized by AFM, SEM, TEM, μ-Raman spectroscopy and etched pit dislocation (EPD) measurements. The results show that rms surface roughness was improved by 22.5% for the growth on nano-patterned templates and the epitaxial layer exhibited a fully relaxed single-crystalline structure. One-order reduction in etch pit density was achieved for the growth on the nano-patterned templates.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
J. Lee, K.L. Wang, H.-T. Chen, L.-J. Chen,