Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1795354 | Journal of Crystal Growth | 2007 | 4 Pages |
Abstract
A co-activating route was employed to fabricate ZnO light-emitting diode (LED) by using molecular beam epitaxy. N2 was used as the acceptor dopant source and O2 was used as assistant gas for N2 decomposing more than only oxygen source. Emission spectra of the N2+O2 mixture plasma were monitored in situ in order to adjust growth parameters timely. Under the assistance of O2, N atoms content in the plasma of the mixture shows a significant increase compared to the case without O2 assistance. Electrical measurements of the as-grown p-type ZnO on sapphire show a carrier concentration of 1.2Ã18Â cmâ3 and a mobility approaching 1Â cm2Â Vâ1Â sâ1. A ZnO LED was fabricated by depositing undoped n-type ZnO on the p-type layer. The turn-on voltage at 100Â K is about 3.70Â V, which approaches the bandgap of ZnO. Electroluminescence spectra show two bands: one is centered at 423 and the other centered at 523Â nm, respectively.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Z.Z. Zhang, Z.P. Wei, Y.M. Lu, D.Z. Shen, B. Yao, B.H. Li, D.X. Zhao, J.Y. Zhang, X.W. Fan, Z.K. Tang,