Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1795361 | Journal of Crystal Growth | 2007 | 4 Pages |
Abstract
High κ Ga2O3(Gd2O3) dielectric was deposited on n-type GaN (0 0 0 1) using molecular beam epitaxy (MBE). TiN/Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor (MOS) diodes have exhibited a negligible frequency dispersion, low leakage currents (∼10−8 A/cm2), and a low interfacial density of states (Dit) of 1011 cm−2 eV−1 at the midgap. Well-behaved capacitance–voltage (CV) curves with accumulation and depletion behaviors were shown, with a dielectric constant of 14.7. Forming gas annealing at 600 °C has reduced the frequency dispersion in the CV curves. A sharp oxide/semiconductor interface was shown by high-resolution transmission electron microscopy (HR-TEM).
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Y.C. Chang, Y.J. Lee, Y.N. Chiu, T.D. Lin, S.Y. Wu, H.C. Chiu, J. Kwo, Y.H. Wang, M. Hong,