Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1795363 | Journal of Crystal Growth | 2007 | 4 Pages |
Abstract
β-FeSi2 film on Si(0 0 1) substrate was prepared by molecular beam epitaxy method using an Fe source. The crystallographic orientation of β-FeSi2 film on Si(0 0 1) substrate was characterized by using X-ray diffraction. Using scanning electron microscopy, surface morphology and film thickness of samples were observed and estimated, respectively. The mobility of β-FeS2 film on Si(0 0 1) substrate were also characterized by Hall measurement at room temperature. A part of the enhancement of figure of merit was evaluated as the functions of mobility and crystallographic orientation of samples.
Related Topics
Physical Sciences and Engineering
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Condensed Matter Physics
Authors
H. Kakemoto, T. Higuchi, H. Shibata, S. Wada, T. Tsurumi,