Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1795381 | Journal of Crystal Growth | 2007 | 5 Pages |
Abstract
We report on the MBE growth of GaSb layer by using three-step ZnTe buffer layer: a thin ZnTe buffer layer was grown at 250 °C (LT-buffer), then annealed at 330 °C (HT-annealing) and a thick buffer layer was grown at 310 °C (HT-buffer). The effect of a three-step buffer on the surface and structural quality of the GaSb layer has been investigated. Two-dimensional reciprocal space mapping (RSM) results of the GaSb layers clearly indicate that the structural deformation of the GaSb layer is greatly reduced by introducing the ZnTe buffer, which remarkably improves the crystallinity of the GaSb layer.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Woong Lee, Siyoung Kim, Sunggook Choi, Hongchan Lee, Sangtae Lee, Seunghwan Park, Takafumi Yao, Joonsuk Song, Hangju Ko, Jiho Chang,