Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1795385 | Journal of Crystal Growth | 2007 | 4 Pages |
Abstract
SiO2/Si/SiO2 sandwich structure was fabricated by sputtering deposition. Many columnar {1 1 1} Si nanocrystals containing nanotwins were observed perpendicular to Si/SiO2 interface after annealing. The preferential growth of {1 1 1} Si nanocrystals can attribute to two reasons, namely the nucleation at Si/SiO2 interface and the lowest surface energy of {1 1 1} planes. The formation of nanotwins is the result of the internal stress during the growth progress of nanocrystals.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
X.W. Du, H. Li, Y.W. Lu, J. Sun,