| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1795388 | Journal of Crystal Growth | 2007 | 4 Pages |
Abstract
An improved MBE-grown ZnO film on nitrided sapphire was obtained by introducing an MgO buffer layer before the ZnO growth. The effect of MgO layer was systematically studied by transmission electron microscopy investigations. It was found that the island feature of MgO buffer promoted the strain relaxation of the nitrided layer, which, in turn, improved the quality of the ZnO film.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Y. Wang, Z.X. Mei, H.T. Yuan, X.L. Du, J. Zou, J.F. Jia, Q.K. Xue, Z. Zhang,