Article ID Journal Published Year Pages File Type
1795489 Journal of Crystal Growth 2007 5 Pages PDF
Abstract

Aluminum oxide was deposited at 45 °C by atomic layer deposition onto an atomically smooth gold surface coated with a CH3-terminated alkanethiolate self-assembled monolayer (SAM) and onto an OH-terminated silicon dioxide surfaces. The growth of the resulting films was characterized with reflection absorption infrared spectroscopy, contact-angle measurement, and atomic force microscope. Aluminum oxide films on the SAMs exhibited a growth instability, while the films on the OH-terminated silicon dioxide maintained an atomically smooth surface.

Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
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