Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1795489 | Journal of Crystal Growth | 2007 | 5 Pages |
Abstract
Aluminum oxide was deposited at 45 °C by atomic layer deposition onto an atomically smooth gold surface coated with a CH3-terminated alkanethiolate self-assembled monolayer (SAM) and onto an OH-terminated silicon dioxide surfaces. The growth of the resulting films was characterized with reflection absorption infrared spectroscopy, contact-angle measurement, and atomic force microscope. Aluminum oxide films on the SAMs exhibited a growth instability, while the films on the OH-terminated silicon dioxide maintained an atomically smooth surface.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Nobuhiko P. Kobayashi, Carrie L. Donley, Shih-Yuan Wang, R. Stanley Williams,