Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1795501 | Journal of Crystal Growth | 2008 | 8 Pages |
Abstract
Grown-in microdefects in dislocation-free silicon are distributed in banded patterns that result from a spatial variation in the type and concentration of the incorporated point defects: vacancies (at V/G larger than some critical value) or self-interstitials otherwise (V is the growth rate, G is the axial temperature gradient). The incorporated point defects agglomerate into microdefects upon lowering the temperature; particularly the vacancies are agglomerated into voids. Oxygen in Czochralski crystals plays an important role by assisting the void formation, by producing joint vacancy-oxygen agglomerates (oxide particles) and by trapping vacancies into VO2 species.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
V.V. Voronkov,