Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1795581 | Journal of Crystal Growth | 2008 | 7 Pages |
Abstract
A slight shift of the emission peaks through high energy and an intense emission peak situated around 2.35Â eV correlated with the local trapping level attributed to structural defects, which are involved in radiative processes, have been evidenced in iodine-doped m-DNB. The emission peak of m-DNB-doped benzil situated in the high-energy range (2.97Â eV) is associated with direct emission activity of m-DNB, suggesting that this is an active impurity in benzil molecular matrix. We have not observed in benzil any evidence of indirect action of the impurity molecules (atoms) associated with the traps represented by the structural defects that generate changes in the energy levels of the neighbouring molecules and are correlated with different growth conditions. We have not remarked any involvement of the studied inorganic metallic impurities and of some organic impurities, such as naphthalene, in the radiative recombination processes in benzil matrix.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
A. Stanculescu, L. Mihut, F. Stanculescu, H. Alexandru,