| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1795591 | Journal of Crystal Growth | 2008 | 4 Pages |
Abstract
Silicon carbide (SiC) is a promising material for next-generation high-power devices, but the high cost of forming wafers is causing a bottleneck in the replacement of Si with SiC. We report a new solution growth process that exhibits potential for the growth of SiC for industrial applications. The driving force of this new process is the chemical potential difference between 3C- and 4H-SiC polytypes and is explained using a stable and metastable double-phase diagram.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Shigeto R. Nishitani, Tadaaki Kaneko,