Molecular beam epitaxy of ScxEr1−xSb on InAs(1 0 0)

The successful molecular beam epitaxial growth of single crystalline ScxEr1−xSb compounds on InAs(1 0 0) substrates has been demonstrated. Ex situ high-resolution X-ray diffraction and Rutherford backscattering spectrometry with ion channeling studies indicate high crystalline quality. The surface reconstruction was monitored in situ by reflection high-energy electron diffraction (RHEED) during the growth and low-energy electron diffraction post growth. The ScxEr1−xSb(1 0 0) surface exhibited a mixed (1×4)/(4×1) reconstruction. The RHEED patterns and the RHEED intensity oscillations during the growth are consistent with an embedded growth mechanism for the initial ScxEr1−xSb growth on InAs.