| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1795621 | Journal of Crystal Growth | 2007 | 5 Pages |
Abstract
High-purity cubic boron nitride (cBN) and hexagonal boron nitride (hBN) single crystals were synthesised at 4.5 GPa and 1500 °C using barium boron nitride as a solvent. Secondary ion mass spectrometry was used to analyse impurities in the crystals. Fine cBN and hBN crystals, whose oxygen and carbon concentrations were less than 1018 atoms/cm3, were obtained, and their band-edge optical properties were measured by cathodoluminescence spectroscopy. High-purity hBN single crystals exhibited intense ultraviolet emission, demonstrating their promise for use as deep ultraviolet-light emitters.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
T. Taniguchi, K. Watanabe,