A general method for the calculation of segregation profiles in floating zone grown silicon ingots with non-uniform initial distribution of the solute

In polycrystalline silicon analytics segregation effects related to radial non-uniform dopant distributions are of major importance for the interpretation of resistivity data. The determination of dopant concentrations and resistivity profiles in polycrystalline silicon inevitably requires the transformation into a single crystal. Neglecting segregation effects may therefore substantially bias the actual material properties.A tool for the computation of final concentration profiles in floating zone grown ingots with non-uniform initial distributions has been developed, which allows the re-calculation of polysilicon data from single crystal data.