InAs0.3Sb0.7 films grown on (1 0 0) GaSb substrates with a buffer layer by liquid-phase epitaxy

The growth of InAsxSb1−x films on (1 0 0) GaSb substrates by liquid-phase epitaxy (LPE) has been investigated and epitaxial InAs0.3Sb0.7 films with InAs0.91Sb0.09 buffer layers have been successfully obtained. The low X-ray rocking curve FHWM values of InAs0.3Sb0.7 layer shows the high quality of crystal-orientation structure. Hall measurements show that the highest electron mobility in the samples obtained is 2.9×104 cm2 V−1 s−1 and the carrier density is 2.78×1016 cm−3 at room temperature (RT). The InAs0.3Sb0.7 films grown on (1 0 0) GaSb substrates exhibit excellent optical performance with a cut-off wavelength of 12 μm.