Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1795706 | Journal of Crystal Growth | 2008 | 8 Pages |
Abstract
Four Te-doped InSb crystals were directionally solidified under microgravity conditions at the International Space Station (ISS). Three Te-doped InSb crystals were grown at R=5 mm/h. One crystal was grown at R=3.33 mm/h. The distribution of Te was measured using secondary ion mass spectroscopy (SIMS). The initial transients in Te concentration were found to be consistent, yielding a diffusivity of Te in InSb melts of D=1×10−5 cm2/s. One experiment revealed a diffusion controlled final transient. In all experiments, the charge was pressurized by a piston and spring device, to prevent de-wetting.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
A.G. Ostrogorsky, C. Marin, A. Churilov, M.P. Volz, W.A. Bonner, T. Duffar,