| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1795727 | Journal of Crystal Growth | 2008 | 7 Pages |
Abstract
A global model for the simulation of dislocation density in the bulk growth of crystals is presented. The model is two-dimensional and quasi-steady; it is based on the original concept of Alexander and Haasen [Solid State Phys. 22 (1968) 27]. The model is validated by experimental results obtained from various growth techniques (LEC, VCz and VGF) with GaAs and InP crystals ranging up to diameters of 6″.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
N. Bános, J. Friedrich, G. Müller,