| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1795740 | Journal of Crystal Growth | 2006 | 5 Pages |
Abstract
The indium-doped CdZnTe crystal was characterized by PL spectra at 10 K and IR transmission spectra, as well as its current–voltage behavior at room temperature. The results showed that indium atoms substituted for the Cd vacancy and produced ionized donors [InCd]+, i.e. indium doping element recombined with [Vcd]2− and formed the singly negative defect complex A-center [InCd+VCd2-]- and the neutral ones [2InCd+VCd2-]0 and [Incd+(InCd+VCd2-)-]0. Indium doping also increased the IR absorption of the CdZnTe crystal due to the lattice absorption and free-carrier absorption. Meanwhile, indium doping increased the electrical resistivity and decreased the leakage current of CdZnTe crystals remarkably.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Qiang Li, Wanqi Jie, Li Fu, Tao Wang, Ge Yang, Xuxu Bai, Gangqiang Zha,