Realization of 1.3 μm InAs quantum dots with high-density, uniformity, and quality

We propose a 1.3 μm high-density InAs quantum dot (QD) structure for optical devices that uses an As2 source and a gradient composition strain reducing layer (GC-SRL). The temperature dependence of the photoluminescence (PL) peak intensity for a temperature increase from 11 K to room temperature was very low at 13. Moreover, the PL peak intensity was ten times greater than that of low-density QDs because of an increase in the QD number, although the PL bandwidth was the same. For the first time, we realized QDs with high-density, uniformity, and quality. This is a promising result since optical devices with QDs exceeding 1.3 μm on a GaAs substrate are useful in fiber communications.