| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1795791 | Journal of Crystal Growth | 2007 | 4 Pages |
Abstract
A software for the numerical simulation of crystal growth from the melt under the influence of a traveling magnetic field was developed by coupling a global stationary simulation of the temperature distribution and the electro-magnetic fields to a local transient simulation of the melt. Numerical results of the simulation of the vapor pressure controlled Czochralski (VCz) growth of GaAs are presented.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Christiane Lechner, Olaf Klein, Pierre-Etienne Druet,