Article ID Journal Published Year Pages File Type
1795793 Journal of Crystal Growth 2007 5 Pages PDF
Abstract

A time-dependent 3D numerical model of the solidification process of large size photovoltaic Si ingots is presented. The difficulty of the model is related to the relative movement of various parts of the furnace that we solve by using a dynamic layering mesh approach. This permits to calculate the thermal gradient, solidification rate and hydrodynamics of the silicon, which are important in order to control and optimise the grain structure of the ingot. The comparison between the numerical predictions and the experimental measurement shows a reasonable agreement. The effect of some geometrical modifications of the equipment on the thermal field is studied in order to improve the solidification process and the structure of the ingot.

Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
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