| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1795800 | Journal of Crystal Growth | 2007 | 10 Pages |
Abstract
The set of characteristic parameters which describe modern large industrial CZ silicon single crystal growth systems is introduced. The main melt flow driving mechanisms are considered, and the characteristic density values of various in the melt acting forces are estimated. The analysis is illustrated with examples of numerical simulation and comparisons with experiments.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
A. Muiznieks, A. Krauze, B. Nacke,