| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1795818 | Journal of Crystal Growth | 2007 | 4 Pages |
Abstract
Three-dimensional (3D) thermoelastic stresses are computed for SiC single crystals which are grown with an off-axis orientation of the seed. The geometry is axisymmetric. The results are presented in terms of the resolved shear stress acting on the slip system. While in the on-axis case the resolved shear stress consists only of the component σrzσrz, in the off-axis case it consists of all stress components, whereas the dominant components are σrzσrz, σrrσrr and σzzσzz.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Klaus Böttcher, K. Andrew Cliffe,