Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1795820 | Journal of Crystal Growth | 2007 | 5 Pages |
The modelling and subsequent experimental validation of nitride growth processes in commercial, production scale multi-wafer reactors is investigated with focus on group-III nitride compounds GaN and InGaN. The paper also deals with the development of group-III nitride growth processes at elevated process pressures, highlighting the effects of gas-phase nucleation phenomena on the growth efficiency of GaN. In addition, the latest hardware and process improvements to the Planetary Reactor® technology are presented, with focus on the development using a modelling approach, of a new gas injector design for III-nitride growth. Subsequent experimental validation of the new injector design, and its flexibility to changing process regimes for GaN and InGaN will be demonstrated for the 42×2″ Planetary Reactor®.