| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1795826 | Journal of Crystal Growth | 2007 | 4 Pages |
Abstract
A kinetic model for the n-type doping of SiC is presented. The attention is focalized both on a complete chemical mechanism, with elementary reactions, and on a lumped one; these mechanisms are then used in a 1-D model of a Horizontal Hot Wall Reactor to obtain doping profiles during crystal growth.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
A. Fiorucci, D. Moscatelli, M. Masi,