Low-pressure solution growth (LPSG) of GaN templates with diameters up to 3 inch

The features of solution growth at low pressure (LPSG) for single crystalline GaN are reported. The influence of important process parameters, especially the growth temperature Tg and the partial pressure of the nitrogen supplying ammonia p(NH3) on thermodynamic and kinetic aspects of the growth process and on the resulting crystal properties are investigated. It is presented how the growth rate of the LPSG layer and the formation of parasitically grown GaN depend on Tg and p(NH3). A kind of Ostwald–Miers diagram is derived which shows the T–p(NH3) regions of the best conditions for the growth of GaN by the LPSG method. It is demonstrated that 3 inch GaN templates can be grown successfully by using such LPSG process parameters.