Article ID Journal Published Year Pages File Type
1795843 Journal of Crystal Growth 2008 5 Pages PDF
Abstract

Crystallized SrMoO4 thin films were prepared on (1 0 0)-oriented Si substrates by chemical solution deposition (CSD) method. The effects of the processing parameters on the growth of the films were investigated. Dense scheelite-type SrMoO4 thin films could be prepared when calcined between 350 and 800 °C. The absorption band related to vibration mode of MoO42− tetrahedra in Fourier transform infrared (FT-IR) spectra of SrMoO4 thin films annealed at 350–900 °C was observed that undoubtedly confirmed the appearance of SrMoO4 phase. The results showed that CSD method could be used to prepare SrMoO4 thin films at rather low temperatures.

Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
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