In situ scanning tunnelling microscopy during metal-organic vapour phase epitaxy

We present our in situ scanning tunnelling microscope (STM) for metal-organic vapour phase epitaxy (MOVPE). This STM is not only the first STM for MOVPE, but the first STM that can operate at 650∘C near atmospheric pressure. The current resolution is comparable to ex situ atomic force microscopy, atomic steps are visible. The paper discusses details of the set-up, and the effect of STM operation on the MOVPE process using quantum dot formation as benchmark. First results showed a reduction of the InAs growth rate and an enhanced desorption of quantum dots during STM measurements, most likely due to scan currents still too high.