| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1795880 | Journal of Crystal Growth | 2007 | 4 Pages |
Abstract
BGaAs and BInGaAs alloys have been grown by metalorganic vapour phase epitaxy. The epitaxial layers were grown on (0 0 1) GaAs substrates misoriented 1° towards [1 1 0] using diborane, trimethylindium, triethylgallium and arsine as precursors. The influence of diborane flow rate on the growth mode of BGaAs layers was highlighted. We also studied the influence of boron gas-phase concentration and growth temperature on the incorporation of boron and indium into BGaAs and BInGaAs alloys.BInGaAs/GaAs single quantum wells were grown and quantum well emission was observed by photoluminescence at room and low temperature. At 300 K, emission wavelength was up to 1.07 μm.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Philippe Rodriguez, Laurent Auvray, Hervé Dumont, Jacques Dazord, Yves Monteil,