Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1795889 | Journal of Crystal Growth | 2007 | 5 Pages |
Abstract
Multi-quantum well heterostructures (MQWHs) in the novel dilute nitride Ga(NAsP)/GaP material system have been grown pseudomorphically strained on GaP-substrate by metal organic vapour phase epitaxy (MOVPE). The group V-incorporation has been clarified as a function of growth temperature, chemical composition, gas phase V/V-ratios and macroscopic strain. An overall complex incorporation behaviour of the group V-atoms is observed. The precise adjustment of the V/V competition processes on the crystal surface allows, however, for a control of the solid composition of the Ga(NAsP)/GaP material system.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
B. Kunert, K. Volz, J. Koch, W. Stolz,