Article ID Journal Published Year Pages File Type
1795889 Journal of Crystal Growth 2007 5 Pages PDF
Abstract
Multi-quantum well heterostructures (MQWHs) in the novel dilute nitride Ga(NAsP)/GaP material system have been grown pseudomorphically strained on GaP-substrate by metal organic vapour phase epitaxy (MOVPE). The group V-incorporation has been clarified as a function of growth temperature, chemical composition, gas phase V/V-ratios and macroscopic strain. An overall complex incorporation behaviour of the group V-atoms is observed. The precise adjustment of the V/V competition processes on the crystal surface allows, however, for a control of the solid composition of the Ga(NAsP)/GaP material system.
Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
Authors
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